Awarded Queen Elizabeth Prize for Engineering (2021).
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Isamu Akasaki
Isamu Akasaki was a Japanese materials scientist specializing in the field of semiconductor technology. He is best known for co-inventing the bright gallium nitride (GaN) p–n junction blue LED in 1989 and subsequently the high-brightness GaN blue LED as well.
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science · Japanese materials scientist (1929–2021) · physicist · professor · engineer · electrotechnician · university teacher · scientist · also Isamu Akasaki, Akasaki Isamu, Akasaki
Born 30 January 1929 · Died 1 April 2021 · Q1673706
34 published statements · 0 followers
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2021· 6 entries
Design News: LED Community Saddened by Loss of Nobel Laureate Isamu Akasaki
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The Washington Post: Isamu Akasaki, LED innovator who shared Nobel Prize in physics, dies at 92
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Wall Street Journal: Japanese Scientist Isamu Akasaki Helped Create LED Technology
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Seattle Times: Isamu Akasaki, 92, dies; Nobel winner lit up the world with LEDs
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Died 2021-04-01.
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2015· 1 entry
Awarded Charles Stark Draper Prize (2015).
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2014· 3 entries
Awarded the Nobel Prize in Physics — for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources.
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Awarded Imperial Prize of Japan Academy (2014).
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Awarded Nobel Prize in Physics (2014).
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2013· 1 entry
Published “Physical hydrogels composed of polyampholytes demonstrate high toughness and viscoelasticity” in Nature Materials — cited 2,028 times.
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2011· 2 entries
Won Edison Medal (2011).
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Awarded Order of Culture (2011).
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2009· 1 entry
Awarded Kyoto Prize in Advanced Technology (2009).
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2004· 1 entry
Awarded Person of Cultural Merit (2004).
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2002· 1 entry
Awarded Order of the Rising Sun, 3rd class (2002).
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2000· 2 entries
Awarded Asahi Prize (2000).
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Showed theoretically the orientation dependence of piezoelectric field and the existence of non-/semi-polar GaN crystals, which have triggered today's worldwide efforts to grow those crystals for application to more effi
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1999· 2 entries
Awarded honorary doctorate from University of Montpellier-II (1999).
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Won Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology (1999).
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1998· 1 entry
Awarded IEEE Jack A. Morton Award (1998).
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1996· 2 entries
Won Medal with Purple Ribbon (1996).
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Was a project leader of the Japan Society for the Promotion of Science's for the "Future program" up to 2001
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1992· 1 entry
Akasaki became a professor in the Graduate School of Science and Technology at Meijo University
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1990· 1 entry
And developed in 1995 the stimulated emission at 388 nm with pulsed current injection from high-quality AlGaN/GaN/GaInN quantum well device
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1989· 2 entries
And subsequently the high-brightness GaN blue LED as well
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Published “P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)” in Japanese Journal of Applied Physics — cited 1,695 times.
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1986· 1 entry
Published “Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer” in Applied Physics Letters — cited 1,922 times.
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1981· 2 entries
Akasaki started afresh the growth of GaN by MOVPE at Nagoya University, and in 1985 he and his group succeeded in growing high-quality GaN on sapphire substrate by pioneering the low-temperature (LT) buffer layer technol
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Akasaki returned to Nagoya University as a professor
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1952· 1 entry
Akasaki joined the research staff of the Kobe Kogyo Corporation (now Fujitsu Ltd
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1946· 1 entry
From Seventh Higher School Zoshikan (now Kagoshima University) in 1949, and from the Faculty of Science at Kyoto University in 1952
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1929· 2 entries
In Chiran, Japan, and was raised in Kagoshima
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Born 1929-01-30.
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