And developed in 1995 the stimulated emission at 388 nm with pulsed current injection from high-quality AlGaN/GaN/GaInN quantum well device
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And developed in 1995 the stimulated emission at 388 nm with pulsed current injection from high-quality AlGaN/GaN/GaInN quantum well device
Text from Wikipedia, available under CC BY-SA 4.0.
Captured 2026-08-17 from Wikipedia. The archived copy is preserved so this citation survives link rot.