Published “Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer” in Applied Physics Letters — cited 1,922 times.
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Published “Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer” in Applied Physics Letters — cited 1,922 times.
Captured 2026-08-17 from Crossref. The archived copy is preserved so this citation survives link rot.